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HN1B04FU-Y Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications | |||
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HN1B04F
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
VCE (sat)
VBE
fT
Cob
Test
Circuit
Test Condition
â VCB = â35V, IE = 0
â VEB = â5V, IC = 0
â VCE = â1V, IC = â100mA
â VCE = â6V, IC = â400mA
â IC = â100mA, IB = â10mA
â VCE = â1V, IC = â100mA
â VCE = â6V, IC = â20mA
â VCB = â6V, IE = 0, f = 1MHz
Min Typ. Max Unit
â
â â100 nA
â
â â100 nA
70
â
400
25
â
â
â â0.1 â0.25 V
â â0.8 â1.0 V
â
200
â MHz
â
7
â
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
VCE (sat)
VBE
fT
Cob
Test
Circuit
Test Condition
â VCB = 35V, IE = 0
â VEB = 5V, IC = 0
â VCE = 1V, IC = 100mA
â VCE = 6V, IC = 400mA
â IC = 100mA, IB = 10mA
â VCE = 1V, IC = 100mA
â VCE = 6V, IC = 20mA
â VCB = 6V, IE = 0, f = 1MHz
Min Typ. Max Unit
â
â
100 nA
â
â
100 nA
70
â
400
25
â
â
â
0.1 0.25 V
â
0.8
1.0
V
â
300
â MHz
â
7
â
pF
Marking
Equivalent Circuit (Top View)
6
54
50
Q2
Q1
123
2
2007-11-22
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