GT5J301_07 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT5J301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Collector Cut−Off Current
Gate−Emitter Cut−Off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time
Fall Time
Turn−Off Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
I_GES
I_CES
V_{GE (OFF)}
V_{CE (sat)}
C_ies
t_r
t_on
t_f
t_off
V_F
t_rr
R_{th (j−c)}
R_{th (j−c)}
V_GE = ±20V, V_CE = 0
V_CE = 600V, V_GE = 0
I_C = 0.5mA, V_CE = 5V
I_C = 5A, V_GE = 15V
V_CE = 20V, V_GE = 0, f = 1MHz
Inductive Load
V_CC = 300V, I_C = 5A
V_GG = ±15V, R_G = 180Ω
(Note 1)
I_F = 5A, V_GE = 0
I_F = 5A, di / dt = −100A / μs
―
―
Note 1: Switching time measurement circuit and input / output waveforms
MIN TYP. MAX UNIT
―
― ±500 nA
―
―
1.0 mA
5.0
―
8.0
V
―
2.1 2.7
V
―
650
―
pF
― 0.10 ―
― 0.40 ―
μs
― 0.15 0.30
― 0.30 ―
―
―
1.8
V
―
―
200
ns
―
―
4.5 °C / W
―
―
4.9 °C / W
Switching loss measurement waveforms
2
2006-11-01