GT15Q102 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – High Power Switching Applications

GT15Q102
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
I_GES
V_GE = ±20 V, V_CE = 0
¾
I_CES
V_CE = 1200 V, V_GE = 0
¾
V_{GE (OFF)} I_C = 1.5 mA, V_CE = 5 V
4.0
V_{CE (sat)} I_C = 15 A, V_GE = 15 V
¾
C_ies
V_CE = 50 V, V_GE = 0, f = 1 MHz
¾
t_r
Inductive Load
¾
t_on
V_CC = 600 V, I_C = 15 A
¾
t_f
V_GG = ±15 V, R_G = 56 W
¾
t_off
(Note1) _¾
R_{th (j-c)}
¾
¾
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
¾ ±500 nA
¾
1.0 mA
¾
7.0
V
2.1 2.7
V
850
¾
pF
0.05 ¾
0.12 ¾
ms
0.16 0.32
0.56 ¾
¾ 0.74 °C/W
GT15Q301
-V_GE
I_C
R_G
L V_CC
V_CE
V_GE
0
90%
I_C
90%
0 ^VCE
10%
10%
t_{d (off)}
t_f
t_off
Note2: Switching loss measurement waveforms
V_GE
0
90%
10%
10%
90%
10%
t_{d (on)} t_r
10%
t_on
I_C
0 ^VCE
10%
E_off
E_on
2
2002-01-18