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| CTS05S30 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial | |||
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CTS05S30
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 î)
Characteristics
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR(1)
IR(2)
Ct
IF = 0.1 A (Pulse test)
IF = 0.5 A (Pulse test)
VR = 10 V (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
î¥
0.28
0.34
V
î¥
0.41
0.47
V
î¥
î¥
0.15
mA
î¥
î¥
0.30
mA
î¥
55
î¥
pF
5. Marking
Marking Code
8A
Fig. 5.1 Marking
Part Number
CTS05S30
6. Usage Considerations
⢠Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm)
2
2014-04-04
Rev.3.0
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