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CRS30I40A Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Schottky Barrier Diode | |||
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5. Thermal Characteristics
CRS30I40A
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-a)
Thermal resistance (junction-to-lead)
Rth(j-â)
Note
Test Condition
Max
Device mounted on a ceramic board
70
(board size: 50 mm à 50 mm)
(soldering land size: 2 mm à 2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy board 140
(board size: 50 mm à 50 mm)
(soldering land size: 6 mm à 6 mm)
(board thickness: 1.6 mm)
Junction to cathode lead
20
6. Electrical Characteristics (Unless otherwise specified, Ta = 25 î)
Unit
î/W
î/W
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
VFM(1)
VFM(2)
VFM(3)
IRRM(1)
IRRM(2)
Cj
IFM = 0.5 A (pulse measurement)
î¥
0.32
î¥
V
IFM = 1 A (pulse measurement)
î¥
0.37
î¥
IFM = 3 A (pulse measurement)
î¥
0.49 0.55
VRRM = 5 V (pulse measurement)
î¥
8
î¥
µA
VRRM = 40 V (pulse measurement)
î¥
17
100
VR = 10 V, f = 1 MHz
î¥
62
î¥
pF
7. Marking
Marking Code
SV
Part Number
CRS30I40A
Fig. 7.1 Marking
2
2014-04-14
Rev.1.0
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