|
CRS15I30B Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Schottky Barrier Diode | |||
|
◁ |
5. Thermal Characteristics
CRS15I30B
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-a)
Thermal resistance (junction-to-lead)
Rth(j-â)
Note
Test Condition
Max
Device mounted on a ceramic board
70
(board size: 50 mm à 50 mm)
(soldering land size: 2 mm à 2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy board 140
(board size: 50 mm à 50 mm)
(soldering land size: 6 mm à 6 mm)
(board thickness: 1.6 mm)
Junction to cathode lead
20
6. Electrical Characteristics (Unless otherwise specified, Ta = 25 î)
Unit
î/W
î/W
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
VFM(1)
VFM(2)
VFM(3)
IRRM(1)
IRRM(2)
Cj
IFM = 0.1 A (pulse measurement)
î¥
0.25
î¥
V
IFM = 1.0 A (pulse measurement)
î¥
0.33
î¥
IFM = 1.5 A (pulse measurement)
î¥
0.34 0.40
VRRM = 5 V (pulse measurement)
î¥
14
î¥
µA
VRRM = 30 V (pulse measurement)
î¥
28
100
VR = 10 V, f = 1 MHz
î¥
82
î¥
pF
7. Marking
Marking Code
SP
Part Number
CRS15I30B
Fig. 7.1 Marking
2
2014-02-19
Rev.1.0
|
▷ |