CRS10I30C Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Schottky Barrier Diode

5. Thermal Characteristics
CRS10I30C
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
R_th(j-a)
Thermal resistance (junction-to-lead)
R_th(j-ℓ)
Note
Test Condition
Max
Device mounted on a ceramic board
70
(board size: 50 mm × 50 mm)
(soldering land size: 2 mm × 2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy board 140
(board size: 50 mm × 50 mm)
(soldering land size: 6 mm × 6 mm)
(board thickness: 1.6 mm)
Junction to cathode lead
20
6. Electrical Characteristics (Unless otherwise specified, T_a = 25 )
Unit
/W
/W
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
V_FM(1)
V_FM(2)
V_FM(3)
I_RRM(1)
I_RRM(2)
C_j
I_FM = 0.1 A (pulse measurement)

0.25

V
I_FM = 0.7 A (pulse measurement)

0.32

I_FM = 1 A (pulse measurement)

0.33 0.36
V_RRM = 5 V (pulse measurement)

14

µA
V_RRM = 30 V (pulse measurement)

28
100
V_R = 10 V, f = 1 MHz

82

pF
7. Marking
Marking Code
SN
Part Number
CRS10I30C
Fig. 7.1 Marking
2
2014-02-21
Rev.2.0