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CRS05_13 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type | |||
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CRS05
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Test Condition
Min
IFM = 0.1 A
â¯
IFM = 0.7 A
â¯
IFM = 1.0 A
â¯
VRRM = 5 V
â¯
VRRM = 30 V
â¯
VR = 10 V, f = 1.0 MHz
â¯
Device mounted on a ceramic board
(soldering land: 2 mm à 2 mm)
â¯
Device mounted on a glass-epoxy
board
â¯
(soldering land: 6 mm à 6 mm)
Typ.
0.33
0.40
0.42
2.0
20
60
â¯
â¯
Max Unit
â¯
â¯
V
0.45
5.0
μA
200
â¯
pF
70
°C/W
140
2
2013-11-01
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