CRS05 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications Portable Equipment Battery Applications

CRS05
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_{RRM (1)}
I_{RRM (2)}
C_j
R_{th (j-a)}
Test Condition
Min
I_FM = 0.1 A
¾
I_FM = 0.7 A
¾
I_FM = 1.0 A
¾
V_RRM = 5 V
¾
V_RRM = 30 V
¾
V_R = 10 V, f = 1.0 MHz
¾
Device mounted on a ceramic board
¾
(soldering land: 2 mm ´ 2 mm)
Device mounted on a glass-epoxy
board
¾
(soldering land: 6 mm ´ 6 mm)
Typ.
0.33
0.40
0.42
2.0
20
60
¾
¾
Max Unit
¾
¾
V
0.45
5.0
mA
200
¾
pF
70
°C/W
140
Marking
Following Indicates the Date of
Manufacture
Type Code
Lot No.
S5
Cathode mark
Month of
manufac-
ture
Year of
manufac-
ture
January to December
are denoted by letter A
to L respectively.
Last decimal digit of
the year of
manufacture
Standard Soldering Pad
01234
56789
1.2
1.2
2.8
Unit: mm
Handling Precaution
Schottky barrier diodes are having large-reverse current-leakage characteristic compare to the other rectifier
products.This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
2
2002-09-02