30FWJ2C48M_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
30FWJ2C48M,U30FWJ2C48M
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
V_RRM
I_O
I_FSM
T_j
T_stg
30
V
30
A
300 (50 Hz)
A
330 (60 Hz)
−40~125
°C
−40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
POLARITY
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Junction Capacitance
Thermal Resistance
V_FM
I_RRM
C_j
R_{th (j-c)}
I_FM=15A
V_RRM=30V
V_R=10V, f=1.0MHz
Total DC, Junction to Case
V_FM, I_RRM, C_j : A value applied to one cell.
MARKING
TYP. MAX. UNIT
―
0.47
V
―
15
mA
820 ―
pF
―
1.2 °C / W
30FWJ2C
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
30FWJ2C
30FWJ2C
Part No.
30FWJ2C48M
U30FWJ2C48M
2
2006-11-10