2SK4022 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Switching Regulator, DC/DC Converter and Motor Drive Applications

2SK4022
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
I_GSS
V_GS = ±16 V, V_DS = 0 V
⎯
I_DSS
V_DS = 250 V, V_GS = 0 V
⎯
V _{(BR) DSS} I_D = 10 mA, V_GS = 0 V
250
V_th
V_DS = 10 V, I_D = 1 mA
1.5
R_{DS (ON)} V_GS = 10 V, I_D = 1.5 A
⎯
⎪Y_fs⎪
V_DS = 10 V, I_D = 1.5 A
0.5
C_iss
⎯
C_rss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
C_oss
⎯
t_r
10 V
I_D = 1.5 A V_OUT
⎯
V_GS
0V
t_on
4.7 Ω
⎯
R_L = 67 Ω
t_f
⎯
V_DD≒100 V
t_off
Duty ≤ 1%, t_w = 10 μs
⎯
Q_g
⎯
Q_gs
V_DD≒200 V, V_GS = 10 V, I_D = 3 A
⎯
Q_gd
⎯
Typ.
⎯
⎯
⎯
⎯
1.2
2.2
267
32
98
5
20
5
30
12
6
6
Max
±10
100
⎯
3.5
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
⎯
⎯
I_DR = 3 A, V_GS = 0 V
I_DR = 3 A, V_GS = 0 V,
dI_DR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
3
A
⎯
⎯
6
A
⎯
⎯
−2.0
V
⎯
125
⎯
ns
⎯
470
⎯
nC
Marking
K4022
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21