2SK3756 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

2SK3756
Electrical Characteristics (Ta = 25°C)
Characteristics
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load Mismatch (Note 3)
Symbol
P_O
η_D
G_P
V_th
I_DSS
I_GSS
⎯
Test Condition
V_DS = 4.5 V,
I_idle = 200 mA (V_GS = adjust),
f = 470 MHz, P_i = 20dBmW,
V_DS = 4.5 V, I_D =0.5 mA
V_DS = 10 V, V_GS = 0 V
V_GS = 3 V, V_DS = 0 V
V_DS = 4.5 V, f = 470 MHz,
P_i = 20dBmW,
P_o = 31dBmW (V_GS = adjust),
VSWR LOAD 10:1 all phase
Min Typ. Max Unit
31
32
⎯ dBmW
50
60
⎯
%
⎯
12
⎯
dB
⎯
0.95 1.45
V
⎯
⎯
10
μA
⎯
⎯
5
μA
No Degradation
⎯
Note 3: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 470 MHz, V_DS = 4.5 V, I_idle = 200 mA, P_i = 20 dBmW)
C4
P_i
Z_G = 50 Ω
C1
L1 R2
C6
C7
R1
C5
P_O
L2
C2 C3
Z_L = 50 Ω
C8
C1: 20 pF
C2: 17 pF
C3: 1 pF
C4: 2200 pF
C5: 2200 pF
C6: 10000 pF
C7: 2200 pF
C8: 10000 pF
V_GS
V_DS
L1: φ0.6 mm enamel wire, 5.5ID, 5T
L2: φ0.6 mm enamel wire, 5.5ID, 7T
Line: 2mm
R1: 6.8 kΩ
R2: 56 Ω
2
2007-11-01