2SK2777_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
V _{(BR) GSS}
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±25 V, V_DS = 0 V
I_G = ±10 μA, V_DS = 0 V
V_DS = 600 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
V_GS = 10 V, I_D = 3 A
V_DS = 10 V, I_D = 3 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
2SK2777
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
600
—
—
V
2.0
—
4.0
V
—
0.9 1.25
Ω
2.0 5.5
—
S
— 1300 —
— 130 —
pF
— 400 —
—
25
—
Turn−on time
t_on
Switching time
Fall time
t_f
—
45
—
ns
—
40
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
t_off
Q_g
Q_gs
V_DD ≈ 400 V, V_GS = 10 V, I_D = 6 A
Q_gd
— 150 —
—
30
—
—
18
—
nC
—
12
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
Min Typ. Max Unit
—
—
—
6
A
—
—
—
24
A
I_DR = 6 A, V_GS = 0 V
—
—
−1.7
V
— 1000 —
ns
I_DR = 6 A, V_GS = 0 V, dI_DR / dt = 100 A / μs
—
7
—
μC
Marking
K2777
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08