2SK2173_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut–off current
Drain–source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±16 V, V_DS = 0 V
V_DS = 60 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4 V, I_D = 25 A
V_GS = 10 V, I_D = 25 A
V_DS = 10 V, I_D = 25 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t_off
Q_g
Q_gs
V_DD ≈ 48 V, V_GS = 10 V, I_D = 50 A
Q_gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
—
—
I_DR = 50 A, V_GS = 0 V
I_DR = 50 A, V_GS = 0 V
dI_DR / dt = 50 A / μs
Marking
2SK2173
Min Typ. Max Unit
—
—
±10
μA
—
— 100 μA
60
—
—
V
0.8
—
2.0
V
—
19
25
mΩ
—
13
17
28
40
—
S
— 3550 —
— 550 —
pF
— 1600 —
—
25
—
—
55
—
ns
—
60
—
— 180 —
— 110 —
—
70
—
nC
—
40
—
Min Typ. Max Unit
—
—
50
A
—
—
200
A
—
—
−1.7
V
— 120 —
ns
—
0.2
—
μC
K2173
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17