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2SK1828_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICASTIONS) | |||
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2SK1828
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = 10 V, VDS = 0
â¯
â¯
1
μA
V (BR) DSS ID = 100 μA, VGS = 0
20
â¯
â¯
V
IDSS
VDS = 20 V, VGS = 0
â¯
â¯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
â¯
1.5
V
âªYfsâª
VDS = 3 V, ID = 10 mA
20
â¯
â¯
mS
RDS (ON) ID = 10 mA, VGS = 2.5 V
â¯
20
40
Ω
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
â¯
5.5
â¯
pF
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
â¯
1.6
â¯
pF
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
â¯
6.5
â¯
pF
ton
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⯠0.14 â¯
μs
toff
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⯠0.14 â¯
Switching Time Test Circuit
2
2007-11-01
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