2SK1825_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

2SK1825
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0
⎯
⎯
1
μA
V _{(BR) DSS} I_D = 100 μA, V_GS = 0
50
⎯
⎯
V
I_DSS
V_DS = 50 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 5 V, I_D = 0.1 mA
0.8
⎯
2.5
V
⎪Y_fs⎪
V_DS = 5 V, I_D = 10 mA
20
⎯
⎯
mS
R_{DS (ON)} I_D = 10 mA, V_GS = 4.0 V
⎯
20
50
Ω
C_iss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
6.3
⎯
pF
C_rss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
1.3
⎯
pF
C_oss
V_DS = 5 V, V_GS = 0, f = 1 MHz
⎯
5.7
⎯
pF
t_on
V_DD = 5 V, I_D = 10 mA, V_GS = 0~4.0 V ⎯ 0.11 ⎯
μs
t_off
V_DD = 5 V, I_D = 10 mA, V_GS = 0~4.0 V ⎯ 0.15 ⎯
Switching Time Test Circuit
2
2007-11-01