2SK1486_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±30 V, V_DS = 0 V
V_DS = 300 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
I_D = 16 A, V_GS = 10 V
V_DS = 10 V, I_D = 16 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t_off
Q_g
Q_gs
V_DD ≈ 240 V, V_GS = 10 V, I_D = 32 A
Q_gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
—
—
I_DR = 32 A, V_GS = 0 V
I_DR = 32 A, V_GS = 0 V
dI_DR / dt = 100 A / μs
Marking
TOSHIBA
2SK1486
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SK1486
Min Typ. Max Unit
—
— ±100 nA
—
—
300
μA
300
—
—
V
2.0
—
4.0
V
— 0.08 0.095 Ω
10
14
—
S
— 3500 —
— 800 —
pF
— 1250 —
— 255 —
— 325 —
ns
— 280 —
— 540 —
— 140 —
—
60
—
nC
—
80
—
Min Typ. Max Unit
—
—
32
A
—
—
128
A
—
—
−1.8
V
— 615 —
ns
—
6.8
—
μC
2
2006-11-02