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2SK1382_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS) | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutâoff current
Drainâsource breakdown voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 30 A
VGS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnâon time
ton
Switching time
Fall time
tf
Turnâoff time
Total gate charge (Gateâsource
plus gateâdrain)
Gateâsource charge
Gateâdrain (âmillerâ) charge
toff
Qg
Qgs
VDD â 80 V, VGS = 10 V, ID = 60 A
Qgd
SourceâDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
â
â
IDR = 60 A, VGS = 0 V
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs
Marking
2SK1382
Min Typ. Max Unit
â
â ±100 nA
â
â
100
μA
100
â
â
V
0.8
â
2.0
V
â
20
29
mâ¦
â
15
20
30
47
â
S
â 7000 â
â 400 â
pF
â 2700 â
â
16
â
â
55
â
ns
â
80
â
â 280 â
â 176 â
â 132 â
nC
â
44
â
Min Typ. Max Unit
â
â
60
A
â
â
240
A
â
â
â1.6
V
â 300 â
ns
â 0.75 â
μC
TOSHIBA
2SK1382
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20
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