2SK1365_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Power Supply Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±20 V, V_DS = 0 V
V_DS = 800 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
V_DS = 10 V, I_D = 1 mA
I_D = 4 A, V_GS = 10 V
V_DS = 20 V, I_D = 4 A
V_DS = 25 V, V_GS = 0 V, f = 1 MHz
Rise time
t_r
Turn−on time
t_on
Switching time
Fall time
t_f
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t_off
Q_g
Q_gs
V_DD ≈ 400 V, V_GS = 10 V, I_D = 7 A
Q_gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
I_DR
I_DRP
V_DSF
Test Condition
—
—
I_DR = 7 A, V_GS = 0 V
Marking
2SK1365
Min Typ. Max Unit
—
—
±50
nA
—
—
300
μA
1000 —
—
V
1.5
—
3.5
V
—
1.5 1.8
Ω
2.0 4.0
—
S
— 1300 —
— 100 —
pF
— 180 —
—
25
—
—
40
—
ns
—
20
—
— 100 —
— 120 —
—
70
—
nC
—
50
—
Min Typ. Max Unit
—
—
7
A
—
—
21
A
—
—
−1.9
V
K1365
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09