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2SK1359_06 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (®#8722;MOSII.5) DC−DC Converter and Motor Drive Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutâoff current
Drainâsource breakdown voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
VDS = 25 V, VGS = 0V, f = 1 MHz
Rise time
tr
Turnâon time
ton
Switching time
Fall time
tf
Turnâoff time
Total gate charge (Gateâsource
plus gateâdrain)
Gateâsource charge
Gateâdrain (âmillerâ) charge
toff
Qg
Qgs
VDD â 400 V, VGS = 10 V, ID = 4 A
Qgd
SourceâDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
â
â
IDR = 4 A, VGS = 0 V
Marking
2SK1359
Min Typ. Max Unit
â
â
±50
nA
â
â 300 μA
1000 â
â
V
1.5
â
3.5
V
â
3.0 3.8
â¦
1.0 2.0
â
S
â 700 â
â
55
â
pF
â 100 â
â
18
â
â
30
â
ns
â
12
â
â
70
â
â
60
â
â
35
â
nC
â
25
â
Min Typ. Max Unit
â
â
5
A
â
â
15
A
â
â
â1.9
V
K1359
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09
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