2SK1358 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)

2SK1358
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Drain Cut-off Current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Rise Time
Switching
Time
Turn-on Time
Fall Time
Turn-off Time
I_GSS
I_DSS
V_{(BR) DSS}
V_th
R_{DS (ON)}
Y_fs
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
V_GS = ±25V, V_DS = 0V
V_DS = 720V, V_GS = 0V
I_D = 10mA, V_GS = 0V
V_DS = 10V, I_D = 1mA
I_D = 4A, V_GS = 10V
V_DS = 20V, I_D = 4A
V_DS = 25V, V_GS = 0V,
f = 1MHz
MIN. TYP. MAX. UNIT
–
– ±100 nA
–
–
300
µA
900
–
–
V
1.5
–
3.5
V
–
1.1 1.4
Ω
2.0 4.0
–
S
– 1300 1800
pF
–
100 150
–
180 260
–
25
50
–
40
80
–
20
40
ns
–
100 200
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Q_g
V_DD = 400V, V_GS = 10V,
Q_gs
I_D = 9A
Q_gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITION
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
I_DR
–
I_DRP
–
V_DSF
I_DR = 9A, V_GS = 0V
–
120 240
nC
–
70
–
–
50
–
MIN. TYP. MAX. UNIT
–
–
9
A
–
–
27
A
–
–
-2.0
V
2/6
TOSHIBA CORPORATION