2SK1310A_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Output Power
Drain Efficiency
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Drain-Source ON Resistance
Drain-Source ON Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Po
ηD
V _{(BR) DSS}
I_DSS
V_th
R_{DS (on)}
V_{DS (on)}
|Y_fs|
C_iss
C_oss
C_rss
V_DD = 50 V, I_idle = 0.2 A × 2
Pi = 10 W, f = 230 MHz *
I_D = 10 mA, V_GS = 0
V_DS = 80 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 4 A, V_GS = 10 V **
I_D = 4 A, V_GS = 10 V **
I_D = 3 A, V_DS = 20 V **
V_DS = 50 V, V_GS = 0, f = 1 MHz
V_DS = 50 V, V_GS = 0, f = 1 MHz
V_DS = 50 V, V_GS = 0, f = 1 MHz
*:
Push−Pull Operation **: Pulse Test
This transistor is the electrostatic sensitive device. Please handle with caution.
2SK1310A
MIN. TYP. MAX. UNIT
190 220
—
W
—
65
—
%
100 —
—
V
—
—
1.0 mA
0.5
—
3.0
V
—
0.9 1.5
Ω
—
3.6 6.0
V
0.9 1.3
—
S
—
100
—
pF
—
40
—
pF
—
1
—
pF
2
2007-11-01