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2SK1119_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (®#8722;MOSII.5) DC−DC Converter and Motor Drive Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutâoff current
Drainâsource breakdown
voltage
Gate threshold voltage
Drainâsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Turnâon time
ton
Switching time
Fall time
tf
Turnâoff time
toff
Total gate charge (Gateâsource
plus gateâdrain)
Qg
Gateâsource charge
Qgs
VDD â 400 V, VGS = 10 V, ID = 6 A
Gateâdrain (âmillerâ) charge
Qgd
SourceâDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
â
â
IDR = 4 A, VGS = 0 V
Marking
2SK1119
Min Typ. Max Unit
â
â ±100 nA
â
â
300
μA
1000 â
â
V
1.5
â
3.5
V
â
3.0 3.8
â¦
1.0 2.0
â
S
â 700 â
â
55
â
pF
â 100 â
â
18
â
â
30
â
ns
â
12
â
â
70
â
â
60
â
â
35
â
nC
â
25
â
Min Typ. Max Unit
â
â
4
A
â
â
12
A
â
â
â1.9
V
K1119
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09
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