2SJ676 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SJ676
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
V_GS = ±16 V, V_DS = 0 V
V_DS = −200 V, V_GS = 0 V
I_D = −10 mA, V_GS = 0 V
V_DS = −10 V, I_D = −1 mA
V_GS = −10 V, I_D = −1.5 A
V_DS = −10 V, I_D = −1.5 A
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
0V
V_GS
−10 V
I_D = −1.5 A
Output
R_L =
66.7 Ω
V_DD ∼− −100 V
Duty ^<= 1%, t_w = 10 μs
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
Q_g
Q_gs
V_DD ≈ −160 V, V_GS = −10 V, I_D = −2.5 A
Q_gd
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−200 —
—
V
−1.5 — −3.5
V
—
1.6 2.0
Ω
1.0 2.0
—
S
— 410 —
—
40
—
pF
— 145 —
—
20
—
—
45
—
ns
—
15
—
—
85
—
—
10
—
—
6
—
nC
—
4
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Qrr
Test Condition
—
—
I_DR = −2.5 A, V_GS = 0 V
I_DR = −2.5 A, V_GS = 0 V
dl_DR / dt = 100 A / μs
Min Typ. Max Unit
—
— −2.5 A
—
—
−10
A
—
—
2.0
V
—
135
—
ns
— 0.81 —
μC
Marking
J676
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17