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2SJ668_09 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Relay Drive, DC/DC Converter and Motor Drive | |||
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge (gate-source
plus gate-drain)
Gate-source charge
Gate-drain (âMillerâ) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
VGS = ±16 V, VDS = 0 V
VDS = â60 V, VGS = 0 V
ID = â10 mA, VGS = 0 V
ID = â10 mA, VGS = 20 V
VDS = â10 V, ID = â1 mA
VGS = â4 V, ID = â2.5 A
VGS = â10 V, ID = â2.5 A
VDS = â10 V, ID = â2.5 A
VDS = â10 V, VGS = 0 V, f = 1 MHz
0V
VGS
â10 V
ID = â2.5 A
Output
RL = 12 Ω
tf
VDD â â30 V
toff
Duty ⤠1%, tw = 10 μs
Qg
Qgs
VDD â â48 V, VGS = â10 V, ID = â5 A
Qgd
2SJ668
Min Typ. Max Unit
â
â
±10
μA
â
â â100 μA
â60 â
â
V
â35 â
â
V
â0.8 â
â2.0
V
â 0.16 0.25
â¦
â 0.12 0.17
2.5 5.0
â
S
â 700 â
â
60
â
pF
â
90
â
â
14
â
â
24
â
ns
â
14
â
â
95
â
â
15
â
â
11
â
nC
â
4
â
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
â
â
IDR = â5 A, VGS = 0 V
IDR = â5 A, VGS = 0 V
dlDR / dt = 50 A/μs
Min Typ. Max Unit
â
â
â5
A
â
â
â20
A
â
â
1.7
V
â
40
â
ns
â
32
â
nC
Marking
J668
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2009-07-13
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