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2SC6133 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.15 A
VCE = 2 V, IC = 0.5 A
IC = 0.5 A, IB = 10 mA
IC = 0.5 A, IB = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1.
VCC â 12 V, RL = 24 Ω
IB1 = âIB2 = 17 mA
2SC6133
Min Typ. Max Unit
â¯
â¯
100
nA
â¯
â¯
100
nA
20
â¯
â¯
V
400 ⯠1000
200 â¯
â¯
â¯
â¯
0.12
V
â¯
â¯
1.10
V
â¯
18
â¯
pF
â¯
43
â¯
â¯
295
â¯
ns
â¯
45
â¯
20 μs
IB1
IB1
Input
IB2
IB2
Duty cycle < 1%
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
Marking
W
Part No. (or abbreviation code)
J
2
2010-03-07
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