2SC4213A Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – For Muting and Switching Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 25 V, I_C = 0
h_FE
V_CE = 2 V, I_C = 4 mA
(Note)
V_{CE (sat)} I_C = 30 A, I_B = 3 mA
V_BE
V_CE = 2 V, I_C = 4 mA
f_T
V_CE = 6 V, I_C = 4 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Turn-on time
t_on
Switching time Storage time
t_stg
Fall time
t_f
Duty cycle ^<= 2%
Note: h_FE classification A: 200~700, B: 350~1200
2SC4213
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
200 ⎯ 1200
⎯ 0.042 0.1
V
⎯ 0.61 ⎯
V
⎯
30
⎯ MHz
⎯
4.8
7
pF
⎯ 160 ⎯
⎯ 500 ⎯
ns
⎯ 130 ⎯
2
2007-11-01