2SC4118_07 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications

2SC4118
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 35 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_{FE (1)} (Note) V_CE = 1 V, I_C = 100 mA
h_{FE (2)} (Note) V_CE = 6 V, I_C = 400 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
V_BE
V_CE = 1 V, I_C = 100 mA
f_T
V_CE = 6 V, I_C = 20 mA
C_ob
V_CB = 6 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
h_{FE (2)} classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Min Typ. Max
⎯
⎯
0.1
⎯
⎯
0.1
70
⎯
400
25
⎯
⎯
⎯
0.1 0.25
⎯
0.8
1.0
⎯ 300 ⎯
⎯
7
⎯
) Marking Symbol
Unit
μA
μA
V
V
MHz
pF
2
2007-11-01