2SC3075_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching

2SC3075
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
V_CB = 400 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 1 mA, I_E = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 0.1 A
V_CE = 5 V, I_C = 0.5 A
I_C = 0.1 A, I_B = 0.01 A
I_C = 0.1 A, I_B = 0.01 A
Min Typ. Max Unit
―
―
100
μA
―
―
100
μA
500 ―
―
V
400 ―
―
V
20
―
100
10
―
―
―
―
0.5
V
―
―
1.0
V
Rise on time
Switching time Storage time
t_r
OUTPUT
―
―
1.0
20 μs
I_B1
INPUT
t_stg
I_B2 ^IB2
―
―
2.5
μs
V_CC ≈ 200 V
Fall time
t_f
I_B1 = −I_B2 = 0.05 A,
Duty cycle ≤ 1%
―
―
1.5
Marking
C3075
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09