2SB1411_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon PNP Triple Diffused Type

Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat) (1)}
V_{CE (sat) (2)}
V_{BE (sat)}
V_CB = −100 V, I_E = 0
V_EB = −6 V, I_C = 0
I_C = −30 mA, I_B = 0
V_CE = −3 V, I_C = −1 A
V_CE = −3 V, I_C = −2 A
I_C = −1 A, I_B = −2 mA
I_C = −2 A, I_B = −8 mA
I_C = −1 A, I_B = −2 mA
2SB1411
Min Typ. Max Unit
―
― −100 μA
―
― −2.5 mA
−100 ―
―
V
1500 ― 15000
1000 ―
―
―
― −1.5
V
―
― −2.5
―
―
−2.2
V
Turn-on time
Switching time Storage time
Fall time
t_on
I_B2
Output
―
1.0
―
Input
I_B1
t_stg
―
3.0
―
μs
V_CC ≈ −30 V
20 μs
t_f
−I_B1 = I_B2 = 2 mA, duty cycle ≤ 1%
―
2.0
―
Marking
B1411
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21