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2SA2060TE12LF Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications Strobe plications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = â50 V, IE = 0
VEB = â7 V, IC = 0
IC = â10 mA, IB = 0
VCE = â2 V, IC = â0.3 A
VCE = â2 V, IC = â1.0 A
IC = â1.0 A, IB = â0.033 A
IC = â1.0 A, IB = â0.033 A
VCB = â10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC â â30 V, RL = 30 Ω
IB1 = 33 mA,IB2 = 33 mA
2SA2060
Min Typ. Max Unit
â
â â100 nA
â
â â100 nA
â50 â
â
V
200
â
500
100 â
â
â
â
â0.2
V
â
â
â1.1
V
â
20
â
pF
â
60
â
â
250
â
ns
â
90
â
20 μs
IB2
IB1
IB1
Input
IB2
Duty cycle < 1%
VCC
Output
Marking
Part No. (or abbreviation code)
4G
Lot No.
Note 3
Figure 1 Switching Time Test Circuit &
Timing Chart
Note 3: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21
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