20FWJ2C48M_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

20FWJ2C48M,U20FWJ2C48M
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Junction Capacitance
Thermal Resistance
V_FM, I_RRM, C_j : A Value of one cell.
SYMBOL
TEST CONDITION
VFM
IRRM
Cj
Rth _(j-c)
IFM=10A
VRRM=Rated
VR=10V, f=1.0MHz
Total DC, Junction to Case
TYP. MAX. UNIT
― 0.47
V
―
10 mA
680 ―
pF
―
1.5 °C / W
MARKING
20FWJ2C
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
20FWJ2C
20FWJ2C
Part No.
20FWJ2C48M
U20FWJ2C48M
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
V_RRM: Use this rating with reference to the above. V_RRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
I_O:
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I_O and T_j be below 100°C. When using this device, take the margin into consideration by using an
allowable Tamax-I_O curve.
I_FSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
T_j:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a T_j of below 100°C.
Please refer to the Rectifiers databook for further information.
2
2006-11-10