20DL2C41A_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

20DL2C41A,20FL2C41A,20GL2C41A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward
Voltage
(Note 1)
20DL2C41A
20FL2C41A
20GL2C41A
Repetitive Peak Reverse
Current
(Note 1)
Reverse Recovery Time
(Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 10A
V_RRM = Rated
I_F = 2.0A, di / dt = − 50A / μs
I_F = 1A
Total DC, Junction to Case
Note 1: A value applied to one cell.
Note 2: trr Test Circuit
trr Waveform
TYP. MAX UNIT
― 0.98
―
1.3
V
―
1.8
―
50
μA
―
35
ns
―
100
ns
―
1.5 °C / W
Note 3: t_fr Test Circuit
t_fr Waveform
Handling Precaution
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
V_RRM:
We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the
absolute maximum rating of V_RRM for a DC circuit and be no greater than 50% of that of V_RRM for
an AC circuit. V_RRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into
account designing a device at low temperature.
I_O:
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I_O. Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation, set
the margin by using an allowable Tamax-I_O curve.
This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180.
Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device.
We recommend that a device be used at a Tj of below 120°C under the worst load and heat radiation conditions.
Please refer to the Rectifiers databook for further information.
2
2006-11-08