TPD4124AK Datasheet, PDF (13/23 Pages) Toshiba Semiconductor – Intelligent Power Device High Voltage Monolithic Silicon Power IC

3.4
V_CC = 15 V
3.0
2.6
V_CEsatH – T_j
IC = 1.6 A
IC = 1.2 A
2.2
IC = 0.8 A
1.8
IC = 0.4 A
1.4
−50
0
50
100
150
Junction temperature T_j (°C)
TPD4124AK
3.4
V_CC = 15 V
3.0
2.6
V_CEsatL – T_j
IC = 1.6 A
IC = 1.2 A
2.2
1.8
1.4
−50
IC = 0.8 A
IC = 0.4 A
0
50
100
150
Junction temperature T_j (°C)
V_FH – T_j
2.4
2.0
IF = 1.6 A
IF = 1.2 A
1.6
IF = 0.8 A
1.2
IF = 0.4 A
0.8
−50
0
50
100
150
Junction temperature T_j (°C)
V_FL – T_j
2.4
2.0
IF = 1.6 A
IF = 1.2 A
1.6
IF = 0.8 A
1.2
IF = 0.4 A
0.8
−50
0
50
100
150
Junction temperature T_j (°C)
I_CC – V_CC
2.0
T_j =−40°C
T_j =25°C
T_j =135°C
1.5
1.0
0.5
0
12
14
16
18
Control power supply voltage V_CC (V)
V_REG – V_CC
8.0
T_j =−40°C
T_j =25°C
T_j =135°C
7.5
I_REG = 30 mA
7.0
6.5
6.0
12
14
16
18
Control power supply voltage V_CC (V)
13
2008-11-26