TPD4105K Datasheet, PDF (13/25 Pages) Toshiba Semiconductor – High Voltage Monolithic Silicon Power IC

4.0
VCC = 15 V
3.5
V_CEsatH – T_j
3.0
IC = 2.7A
IC = 2.1A
2.5
IC = 1.5A
2.0
IC = 0.9A
1.5
−20
20
60
100
140
Junction temperature T_j (°C)
TPD4105K
4.0
VCC = 15 V
3.5
V_CEsatL – T_j
3.0
IC = 2.7A
IC = 2.1A
2.5
IC = 1.5A
2.0
IC = 0.9A
1.5
−20
20
60
100
140
Junction temperature T_j (°C)
V_FH – T_j
2.4
2.0
IF = 2.7A
1.6
IF = 2.1A
IF = 1.5A
1.2
IF = 0.9A
0._−820
20
60
100
140
Junction temperature T_j (°C)
V_FL – T_j
2.4
IF = 2.7A
2.0
IF = 2.1A
1.6
IF = 1.5 A
1.2
IF = 0.9A
0.8
−20
20
60
100
140
Junction temperature T_j (°C)
I_CC – V_CC
2.0
−20°C
25°C
135°C
1.5
1.0
0.5
0
12
14
16
18
Control power supply voltage V_CC (V)
V_REG – V_CC
7.4
−20°C
25°C
135°C
Ireg = 30 mA
7.2
7.0
6.8
6.6
12
14
16
18
Control power supply voltage V_CC (V)
13
2007-05-10