USF5G49 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Thyristor Silicon Planar Type

SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
· Repetitive peak off-state voltage: VDRM = 400, 600 V
Repetitive peak reverse voltage: VRRM = 400, 600 V
· Average on-state current: IT (AV) = 5 A
· Gate trigger current: IGT = 70 µA max
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R_GK = 330 W)
SF5G49
USF5G49
SF5J49
USF5J49
V_DRM
V_RRM
400
600
V
Non-repetitive peak
reverse voltage
SF5G49
USF5G49
500
(non-repetitive < 5 ms,
V_RSM
V
T_j = 0~125°C,
R_GK = 330 W)
SF5J49
USF5J49
720
Average on-state current
I_{T (AV)}
5
A
R.M.S on-state current
I_{T (RMS)}
7.8
A
Peak one cycle surge on-state current
(non-repetitive)
I_TSM
65 (50 Hz)
A
I²t limit value
I²t
20
A²s
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
P_GM
0.5
W
P_{G (AV)}
0.05
W
V_FGM
5
V
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
V_RGM
I_GM
T_j
T_stg
-5
V
200
mA
-40~125
°C
-40~125
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as follows:
Anode
Gate
R_GK ^<= 330 W
Cathode
JEDEC
―
JEITA
―
TOSHIBA
13-F2A
Weight: 0.28 g (typ.)
1
2002-02-05