USF05G49 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – LOW POWER SWITCHING AND CONTROL APPLICATIONS

TOSHIBA THYRISTOR SILICON PLANAR TYPE
USF05G49
USF05G49
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage : VDRM = 400 V
Repetitive Peak Reverse Voltage : VRRM = 400 V
Average On−State Current
: IT (AV) = 500 mA
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off−State Voltage
and Repetitive Peak Reverse
Voltage
Non-Repetitive Peak Reverse Voltage
(Non−Repetitive<5ms, Tj = 0~125°C)
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_G(AV)
V_FGM
V_RGM
I_GM
T_j
T_stg
400
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
−5
125
−40~125
−40~125
Note 1: di / dt Test condition: i_G = 5mA, t_gw = 10µs, t_gr≤250ns
UNIT
V
V
mA
mA
A
A²s
A / _µs
W
W
V
V
mA
°C
°C
MARKING
JEDEC
―
JEITA
―
TOSHIBA
13-5B1A
Weight: 0.2 g (typ.)
Note:
Should be used with
gate resistance as
shown below.
Part No. (or abbreviation code)
PA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06