U5ZA53C Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Diffused-Junction Type Zener Diode

TOSHIBA Zener Diode Silicon Diffused-Junction Type
U5ZA53C
Best Suited for Overvoltage Protection of Electronic
System:
Electronic System for Use in Automobiles
Electronic System for Commercial Use
Electronic System for Industrial Use
For Communications, Controls, Measuring Instruments,
etc.
· High surge power withstanding capabilities that absorb load dump
surge.
· Excellent surge responsibility for steep surge absorption.
· Surface mount type is available for easy applications.
U5ZA53C
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Allowable power dissipation (Note)
Non-repetitive peak reverse surge
current
(see figure 1 for the exponents.)
Peak one cycle surge forward current
(single half sine-wave, t = 10 ms)
Junction temperature
Storage temperature
P
I_RSM
I_FSM
T_j
T_stg
Note: Lead tip temperature T_L = 25°C
Rating
Unit
5
W
45
A
700
A
-40 to 150
°C
-40 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
3-11J2A
Weight: 2.5 g (typ.)
I_RSM
I_RSM
2
0 10 ms
Figure 1
1
2002-08-14