U5ZA27C Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE

U5ZA27(Z),U5ZA27C
TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE
U5ZA27(Z),U5ZA27C
BEST SUITED FOR OVERVOLTAGE PROTECTION OF
ELECTRONICSYSTEM :
ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES
ELECTRONIC SYSTEM FOR COMMERCIAL USE
ELECTRONIC SYSTEM FOR INDUSTRIAL USE
FOR COMMUNICATIONS, CONTROLS, MEASURING
INSTRUMENTS, ETC.
Unit: mm
l High surge power withstanding capabilities that absorb load dump surge.
l Excellent surge responsibility for steep surge absorption.
l Surface mount type is available for easy applications. Axial lead type is
also available.
l Corresponds to taping packages.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Allowable power dissipation (Note 1)
Non-repetitive peak reverse surge
current
(See Fig.1 for the exponents.)
Junction temperature
Storage temperature
P
I_RSM
T_j
T_stg
Note 1: Lead tip temperature T_L = 25°C
RATINGS
5
62
−40~150
−40~150
UNIT
W
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.5 g
―
―
3−11J2A
Fig.1
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Type No.
U5ZA27(Z) / C
Zener voltage
V_Z [V]
(I_Z = 10 mA)
Min Typ. Max
24.0
27
30.0
Operating resistance
r_d [Ω]
(I_Z = 10 mA)
Max
30
Temperature
coefficient
α_T [mV / °C]
(I_Z = 10 mA)
Typ.
Max
23
36
Forward voltage
V_F [V]
(I_F = 6 A)
Max
1.2
Reverse current
I_R [µA]
(V_R = 22 V)
Max
10
1
2001-07-11