U30QWK2C53 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Application Converter&Chopper Application

U30QWK2C53
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
U30QWK2C53
Switching Mode Power Supply Application
Converter&Chopper Application
Unit: mm
· Repetitive peak reverse voltage: VRRM = 120 V
· Peak forward voltage: VFM = 0.85 V (max)
· Average output recified current: IO = 30 A
· Power surface mount device for thin flat package.
· “TFP” (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average output recified current
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_O
I_FSM
T_j
T_stg
Rating
Unit
120
V
30
A
100 (50 Hz)
A
110 (60 Hz)
-40 to 150
°C
-40 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
12-9B1A
Weight: 0.74 g (typ.)
Polarity
③K
*①A1 ②A2
*: Common Terminal
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier
products. This current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
1
2003-02-17