U30GWJ2C53C Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Application Converter&Chopper Application

U30GWJ2C53C
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
U30GWJ2C53C
Switching Mode Power Supply Application
Converter&Chopper Application
Unit: mm
· Repetitive peak reverse voltage: VRRM = 40 V
· Average output recified current: IO = 30 A
· Power surface mount device for thin flat package.
“TFP” (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
40
V
Repetitive peak reverse surge voltage
(Note1)
V_RRSM
48
V
Average output recified current
I_O
30
A
Peak one cycle surge forward current
(non-repetitive, sine wave)
I_FSM
300 (50 Hz)
A
330 (60 Hz)
Junction temperature
Storage temperature range
T_j
-40 to 125
°C
T_stg
-40 to 150
°C
Note1: Pulse width (tw) =< 500 ns, duty (tw/T) ^<= 1/25
JEDEC
―
JEITA
―
TOSHIBA
12-9B1A
Weight: 0.74 g (typ.)
Polarity
③K
*①A1 ②A2
*: Common Terminal
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier
products. This current leakage and not proper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
1
2003-02-17