U20GL2C48A_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION

U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
U20GL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER and CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : V_RRM = 400V
z Average Output Rectified Current : I_O = 20A
z Ultra Fast Reverse−Recovery Time : t_rr = 35ns (Max)
z Low Switching Losses and Output Noise
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V_RRM
400
V
Average Output Rectified Current
I_O
20
A
Peak One Cycle Surge Forward
Current (Sin Wave)
I_FSM
100 (50Hz)
A
110 (60Hz)
Junction Temperature
Storage Temperature Range
T_j
−40~150
°C
T_stg
−40~150
°C
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
12-10D2A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 10A
V_RRM = 400V
I_F = 2A, di / dt = −50A / μs
I_F = 1A
Total DC, Junction to Case
Note: V_FM, I_RRM, t_rr, t_fr ········ A value applied to one cell.
POLARITY
MIN TYP. MAX UNIT
―
―
1.8
V
―
―
50
μA
―
―
35
ns
―
―
100
ns
―
―
1.6 °C / W
1
2006-11-08