U20GL2C48A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
U20GL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
l Repetitive Peak Reverse Voltage : VRRM = 400V
l Average Output Rectified Current : IO = 20A
l Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
l Low Switching Losses and Output Noise.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_O
I_FSM
T_j
T_stg
RATING
400
20
100 (50Hz)
110 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
12−10D2A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 10A
V_RRM = 400V
I_F = 2A, di / dt = −50A / µs
I_F = 1A
DC Total, Junction to Case
Note: V_FM, I_RRM, t_rr, t_fr ········ A value of one cell.
POLARITY
MARKING
*1
MARK
*2
A
MIN TYP. MAX UNIT
―
―
1.8
V
―
―
50
µA
―
―
35
ns
―
―
100
ns
―
―
1.6 °C / W
20GL2C
*3
1
2001-07-11