U1DL49 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE

U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS
Unit: mm
l Repetitive Peak Reverse Voltage : VRRM = 200V
l Average Forward Current
: IF (AV) = 1.0A
l Very Fast Reverse−Recovery Time: t_rr = 60ns (Max)
l Low Forward Voltage
: VFM = 0.98V (Max)
l Available to Reduce Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
RATING
200
1.0
15 (50Hz)
16.5 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g
―
―
3−5E1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time (Note 1)
Forward Recovery Time
(Note 2)
Thermal Resistance
SYMBOL
V_FM
I_RRM
t_rr
t_fr
R_{th (j−a)}
TEST CONDITION
I_FM = 1.0A
V_RRM = 200V
I_F = 1A, di / dt = −20A / µs
I_F = 1.0A
Junction to Ambient
MIN TYP. MAX UNIT
―
― 0.98
V
―
―
10
µA
―
―
60
ns
―
―
100
ns
―
―
125 °C / W
Note 1: t_rr TEST CIRCUIT
Note 2: t_fr TEST CIRCUIT
MARKING
WAVEFORM
WAVEFORM
CODE
RD
TYPE
U1DL49
1
2001-07-11