U1BC44 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE

U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
Unit: mm
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Mini Plastic Mold Package
: IF (AV) = 1.0A
: VRRM = 100, 400, 600V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Repetitive Peak
Reverse Voltage
U1BC44
U1GC44
U1JC44
V_RRM
Average
Forward
Current
On Ceramic Substrate
On Glass−epoxy
Substrate
I_{F (AV)}
Peak One Cycle Surge Forward
Current (Non−Repetitive)
I_FSM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
100
400
600
1.0
(Ta = 75°C)
0.9
(Ta = 25°C)
30 (50Hz)
33 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
―
―
3−4D1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Thermal Resistance
SYMBOL
TEST CONDITION
V_FM
I_FM = 1.0A
I_RRM
V_RRM = Rated
R_{th (j−a)}
On ceramic substrate
DC
On glass-epoxy substrate
MIN TYP. MAX UNIT
―
―
1.2
V
―
―
10
µA
―
―
60
°C / W
―
―
120
STANDARD SOLDERING PAD
1
2001-07-18