TVR5B Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR5B,TVR5G,TVR5J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR5B,TVR5G,TVR5J
TV Applications (fast recovery)
Unit: mm
· Average Forward Current: IF (AV) =0.5 A
· Repetitive Peak Reverse Voltage: VRRM = 100 V, 400V, 600V
· Reverse Recovery Time: trr = 1.5 µs
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR5B
TVR5G
TVR5J
Average forward current
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
Unit
100
400
V
600
0.5
A
20
A
-40 to 125
°C
-40 to 125
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
V_FM
I_RRM
t_{rr (1)}
t_{rr (2)}
Test Condition
I_FM = 0.5 A
V_RRM = Rated
I_F = 20 mA, I_R = 1 mA
I_F = 100 mA, I_R = 100 mA
JEDEC
―
JEITA
―
TOSHIBA
3-3F2A
Weight: 0.18 g (typ.)
Min Typ. Max Unit
¾
¾
1.2
V
¾
¾
10
mA
¾
¾
1.5
ms
¾
¾
500
ms
Marking
Type Code Lot No.
Month (starting from alphabet A)
V5J
Year (last number of the christian era)
Cathode Mark
Color: Silver
Code
V5B
V5G
V5J
Type
TVR5B
TVR5G
TVR5J
1
2002-09-18