TVR4J Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm
· Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V
· Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C)
· Reverse Recovery Time: trr = 20 µs
· Plastic Mold Type.
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR4J
TVR4N
Average forward current (Ta = 55°C )
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
Unit
600
V
1000
1.2
A
100 (50 Hz)
A
-40 to 150
°C
-40 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ.
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Thermal resistance (junction to ambient)
V_FM
I_RRM
t_rr
R_{th (j-a)}
I_FM = 5 A
V_RRM = Rated
I_F = 20 mA, I_R = 1 mA
DC
¾
¾
¾
¾
¾
¾
¾
¾
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Max Unit
1.2
V
10
mA
20
ms
80 °C/W
Marking
Type Code Lot No.
Cathode Mark
Color: Silver
Month (starting from alphabet A)
Year (last number of the christian era)
Code
VR4J
VR4N
Type
TVR4J
TVR4N
1
2002-09-18