TVR2B Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TV Applications (fast recovery)

TVR2B,TVR2G,TVR2J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR2B,TVR2G,TVR2J
TV Applications (fast recovery)
Unit: mm
• Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C)
• Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V
• Reverse Recovery Time: trr = 5 to 20 µs
• Plastic Mold Type.
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR2B
TVR2G
TVR2J
Reverse voltage
(DC)
TVR2B
TVR2G
TVR2J
Average forward current (Ta = 50°C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
V_RRM
V_R
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
Unit
100
400
V
600
50
300
V
500
0.5
A
30 (50 Hz)
A
33 (60 Hz)
−40 to 125
°C
−40 to 125
°C
JEDEC
DO-41
JEITA
―
TOSHIBA
3-3C1A
Weight: 0.3 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery voltage
V_FM
I_RRM
t_rr
V_fr
I_FM = 1.0 A
V_RRM = Rated
I_F = 20 mA, I_R = 1 mA
I_F = 0.1 A, t_r = 100 ns, t_w = 5 µs
⎯
⎯
1.4
V
⎯
⎯
10
µA
5
⎯
20
µs
⎯
⎯
6
V
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Marking
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
VR2B
VR2G
VR2J
Part No.
TVR2B
TVR2G
TVR2J
1
2004-08-10