TVR1B Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Unit: mm
· Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C)
· Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
· Reverse Recovery Time: trr = 2.0 µs
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse
voltage
TVR1B
TVR1G
TVR1J
Average forward current (Ta = 65°C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
Unit
100
400
V
600
0.5
A
10 (50 Hz)
A
-40~125
°C
-40~125
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
V_FM
I_RRM
t_rr (1)
t_rr (2)
Test Condition
I_FM = 0.5 A
V_RRM = Rated
I_F = 20 mA, I_R = 1 mA
I_F = 100 mA, I_R = 100 mA
JEDEC
―
JEITA
―
TOSHIBA
3-3C1A
Weight: 0.3 g (typ.)
Min Typ. Max Unit
¾
¾
1.2
V
¾
¾
10
mA
¾
¾
2.0
ms
¾
0.3
¾
Marking
Type Code Lot No.
Cathode Mark
Color: Silver
Month of
manufac-
ture
Year of
manufac-
ture
January to December
are denoted by letter A
to L respectively.
Last decimal digit of
the year of
manufacture
Code
VR1B
VR1G
VR1J
Type
TVR1B
TVR1G
TVR1J
1
2002-09-18