TTC012 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Bipolar Transistors Silicon NPN Triple-Diffused Type

Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC012
1. Applications
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
2. Features
(1) High speed switching : t_f = 0.15 µs (typ.) (I_C = 0.5 A)
(2) High collector breakdown voltage: V_CES = 800 V , V_CEO = 375 V
3. Packaging and Internal Circuit
TTC012
1. Base
2. Collector
3. Emitter
New PW-Mold2
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
V_CBO
800
V
V_CES
800
V_CEO
375
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
(T_a = 25)
(Note 1)
(Note 1)
V_EBO
I_C
I_CP
I_B
P_C
8
2.0
A
3.0
1.0
1.1
W
Junction temperature
Storage temperature
T_j
150

T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
1
2012-08-27
Rev.1.0